FD1000R33HL3-K - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FD1000R33HL3-K
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 11500
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 1000
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.4
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.4
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 550
Paquete / Cubierta: MODULE
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FD1000R33HL3-K Datasheet (PDF)
fd1000r33hl3-k.pdf
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FD1000R33HL3-KIHM-B Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 DiodeIHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diodeV = 3300VCESI = 1000A / I = 2000AC nom CRMPotentielle Anwendungen Potential Applications Chopper-Anwendungen Chopper applications Mittelspannungsantriebe Medium voltage converters Motorantriebe Motor dr
fd1000r33he3-k.pdf
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FD1000R33HE3-KIHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 DiodeIHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diodeV = 3300VCESI = 1000A / I = 2000AC nom CRMPotentielle Anwendungen Potential Applications Chopper-Anwendungen Chopper applications Mittelspannungsantriebe Medium voltage converters Motorantrie
fd1000r17ie4d b2.pdf
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/ Technical InformationIGBT-FD1000R17IE4D_B2IGBT-modulesPrimePACK3 and NTCPrimePACK3 module and NTC / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRM Typical Applications 3 3-Level-Applications
fd1000r17ie4.pdf
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Technische Information / Technical InformationIGBT-ModuleFD1000R17IE4IGBT-modulesPrimePACK3 Modul und NTCPrimePACK3 module and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Chopper-Anwendungen Chopper Applications Hochleistung
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ