FD600R06ME3_S2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FD600R06ME3_S2
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 2250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 600 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 150 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de FD600R06ME3_S2 - IGBT
FD600R06ME3_S2 Datasheet (PDF)
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fd600r12kf4.pdf
European Power-Semiconductor andElectronics CompanyGmbH + Co. KGMarketing InformationFD 600 R 12 KF455,211,85M8screwing depthmax. 813031,5114E1 C2C1 E2E1C1G1167M440282,5 deep 2,5 deepscrewing depth53max. 8E1 C2 (K)E1G1C1C1 E2 (A)A13/97 Mod-E/ 13.Jan 1998 G.SchulzeFD 600 R 12 KF 4Hchstzulssige Werte / Maximum rated values
fd600r16kf4.pdf
European Power-Semiconductor andElectronics CompanyMarketing InformationFD 600 R 16 KF455,211,85M8screwing depthmax. 813031,5114E1 C2C1 E2E1 E2C1 C2G1 G216 187M440 44282,5 deep2,5 deepscrewing depth53 57max. 8E1 C2 (K)E1G1C1C1 E2 (A)VWK Apr. 1997IGBT-Module FD 600 R 16 KF4Hchstzulssige Werte / Maximum rated valuesElekt
Otros transistores... FD300R12KS4_B5 , FD400R12KE3_B5 , FD400R33KF2C , FD400R33KF2C-K , FD400R65KF1-K , FD401R17KF6C_B2 , FD500R65KE3-K , FD600R06ME3_B11_S2 , GT30F131 , FD600R12IP4D , FD600R12KF4 , FD600R16KF4 , FD600R17KE3_B2 , FD600R17KF6C_B2 , FD650R17IE4 , FD650R17IE4D_B2 , FD800R17KE3_B2 .
Liste
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