FF200R17KE4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FF200R17KE4
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
FF200R17KE4 Datasheet (PDF)
ff200r17ke4.pdf

Technische Information / Technical InformationIGBT-ModuleFF200R17KE4IGBT-modules62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1700VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications H
ff200r17ke3.pdf

Technische Information / Technical InformationIGBT-ModuleFF200R17KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT und Emitter ControlledDiode 62mm C-series module with trench/fieldstop IGBT and Emitter Controlled diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspa
ff200r12ks4.pdf

Technische Information / Technical InformationIGBT-ModuleFF200R12KS4IGBT-modules62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Appli
ff200r12ke3.pdf

Technische Information / Technical InformationIGBT-ModuleFF200R12KE3IGBT-modulesIGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 200 AC vj max C nomContinuous DC collector current T = 25C, T = 150C I 295 A
Otros transistores... FF200R06YE3 , FF200R12KE4 , FF200R12KS4 , FF200R12KT3 , FF200R12KT3_E , FF200R12KT4 , FF200R12MT4 , FF200R17KE3 , IRG4PC50U , FF200R33KF2C , FF225R12ME3 , FF225R12ME4 , FF225R12ME4_B11 , FF225R12MS4 , FF225R17ME3 , FF225R17ME4 , FF225R17ME4_B11 .
History: STGWA30IH65DF | IXGR50N160H1
History: STGWA30IH65DF | IXGR50N160H1



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