HGTP5N120BND - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGTP5N120BND
Tipo de transistor: IGBT + Diode
Código de marcado: 5N120BND
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 167 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 21 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.8(typ) V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 15 nS
Qgⓘ - Carga total de la puerta, typ: 53 nC
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de HGTP5N120BND - IGBT
HGTP5N120BND Datasheet (PDF)
hgtg5n120bnd hgtp5n120bnd hgt1s5n120bnds.pdf
HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC
hgtg5n120bnd hgtp5n120bnd.pdf
HGTG5N120BND, HGTP5N120BNDData Sheet May 200321A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BND and HGTP5N120BND are Non- 1200V Switching SOA CapabilityPunch Through (NPT) IGBT designs. They are new Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oCmembers of the MOS gated high v
hgtg5n120bnd hgtp5n120bnd.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
hgtp5n120bnd.pdf
HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC
hgtp5n120bn hgt1s5n120bns.pdf
HGTP5N120BN, HGT1S5N120BNSData Sheet January 2000 File Number 4599.221A, 1200V, NPT Series N-Channel IGBTs FeaturesThe HGTP5N120BN and the HGT1S5N120BNS are 21A, 1200V, TC = 25oCNon-Punch Through (NPT) IGBT designs. They are new 1200V Switching SOA Capabilitymembers of the MOS gated high voltage switching IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ
hgtg5n120cnd hgtp5n120cnd hgt1s5n120cnds.pdf
HGTG5N120CND, HGTP5N120CND,HGT1S5N120CNDSData Sheet January 2000 File Number 4598.225A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 25A, 1200V, TC = 25oCThe HGTG5N120CND, HGTP5N120CND and 1200V Switching SOA CapabilityHGT1S5N120CNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oCde
hgtp5n120cn hgt1s5n120cns.pdf
HGTP5N120CN, HGT1S5N120CNSData Sheet December 200125A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTP5N120CN and HGT1S5N120CNS are Non-Punch 25A, 1200V, TC = 25oCThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150
Otros transistores... HGTP2N120CND , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , CRG60T60AK3HD , HGTP5N120CN , HGTP5N120CND , HGTP6N40E1D , HGTP6N50E1D , HGTP7N60A4 , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2