HGTP5N120BND Todos los transistores

 

HGTP5N120BND - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTP5N120BND

Polaridad de transistor: N-Channel

Tensión colector-emisor (Vce): 1200

Corriente del colector DC máxima (Ic): 21

Temperatura operativa máxima (Tj), °C: 150

Empaquetado / Estuche: TO220AB

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HGTP5N120BND Datasheet (PDF)

0.1. hgtg5n120bnd hgtp5n120bnd.pdf Size:195K _fairchild_semi

HGTP5N120BND
HGTP5N120BND

HGTG5N120BND, HGTP5N120BNDData Sheet May 200321A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BND and HGTP5N120BND are Non- 1200V Switching SOA CapabilityPunch Through (NPT) IGBT designs. They are new Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oCmembers of the MOS gated high v

0.2. hgtp5n120bnd.pdf Size:28K _intersil

HGTP5N120BND
HGTP5N120BND

HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC

 

Otros transistores... HGTP2N120CND , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , 1MBH50D-060 , HGTP5N120CN , HGTP5N120CND , HGTP6N40E1D , HGTP6N50E1D , HGTP7N60A4 , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D .

 

 
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