FF225R12MS4 Todos los transistores

 

FF225R12MS4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FF225R12MS4
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1450 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 225 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 125 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Paquete / Cubierta: MODULE
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FF225R12MS4 Datasheet (PDF)

 ..1. Size:501K  infineon
ff225r12ms4.pdf pdf_icon

FF225R12MS4

Technische Information / Technical InformationIGBT-ModuleFF225R12MS4IGBT-modulesEconoDUAL3 Modul mit schnellem IGBT2 fr hochfrequentes Schalten EconoDUAL3 module with fast IGBT2 for high switching frequency Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200

 5.1. Size:582K  infineon
ff225r12me4p.pdf pdf_icon

FF225R12MS4

FF225R12ME4PEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 225A / I = 450AC nom CRMTypische Anwendungen Typical Applications Motorantriebe

 5.2. Size:677K  infineon
ff225r12me3.pdf pdf_icon

FF225R12MS4

/ Technical InformationIGBT-FF225R12ME3IGBT-modulesEconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated ValuesT = 25C V 1200 V

 5.3. Size:897K  infineon
ff225r12me4 b11.pdf pdf_icon

FF225R12MS4

/ Technical InformationIGBT-FF225R12ME4_B11IGBT-modulesEconoDUAL3 /IGBT4HEpressfitNTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC / Preliminary DataV = 1200VCESI = 225A / I = 450AC no

Otros transistores... FF200R12KT4 , FF200R12MT4 , FF200R17KE3 , FF200R17KE4 , FF200R33KF2C , FF225R12ME3 , FF225R12ME4 , FF225R12ME4_B11 , GT30J122 , FF225R17ME3 , FF225R17ME4 , FF225R17ME4_B11 , FF300R06KE3 , FF300R06KE3_B2 , FF300R07KE4 , FF300R07ME4_B11 , FF100R12KS4 .

History: IXYN82N120C3 | DM2G150SH6NE | MMG200D120B6UC | CM50YE13-12H | CM100RL-24NF | IXXH50N60B3D1 | CM600DXL-24S

 

 
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