FF100R12KS4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FF100R12KS4
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 780 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 125 ℃
trⓘ - Tiempo de subida, typ: 60 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
FF100R12KS4 Datasheet (PDF)
ff100r12ks4.pdf

Technische Information / Technical InformationIGBT-ModuleFF100R12KS4IGBT-modules62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 100A / I = 200AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Appli
ff100r12yt3.pdf

Technische Information / Technical InformationIGBT-ModuleFF100R12YT3IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 100 AC vj max C nomContinuous DC collector cu
ff100r12rt4.pdf

Technische Information / Technical InformationIGBT-ModuleFF100R12RT4IGBT-modules34mm Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode34mm module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrich
Otros transistores... FF225R12MS4 , FF225R17ME3 , FF225R17ME4 , FF225R17ME4_B11 , FF300R06KE3 , FF300R06KE3_B2 , FF300R07KE4 , FF300R07ME4_B11 , IRG4PC40W , FF100R12RT4 , FF100R12YT3 , FF1200R12KE3 , FF1200R17KE3 , FF1200R17KE3_B2 , FF1200R17KP4_B2 , FF1400R17IP4 , FF150R12KE3G .
History: MMG75S120UA6TN | MMGT100J120UZ6C | 7MBP100VDA060-50 | IXSM25N100 | IXXH80N65B4 | MG06200S-BN4MM | VS-GT105LA120UX
History: MMG75S120UA6TN | MMGT100J120UZ6C | 7MBP100VDA060-50 | IXSM25N100 | IXXH80N65B4 | MG06200S-BN4MM | VS-GT105LA120UX



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
c3198 transistor | irfb3607pbf datasheet | 60n60 | 2n5485 equivalent | 2sa1941 | 2sc485 | 2sd287 | 2sd438