FF150R17KE4 Todos los transistores

 

FF150R17KE4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FF150R17KE4
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Paquete / Cubierta: MODULE

 Búsqueda de reemplazo de FF150R17KE4 - IGBT

 

FF150R17KE4 Datasheet (PDF)

 ..1. Size:571K  infineon
ff150r17ke4.pdf

FF150R17KE4
FF150R17KE4

FF150R17KE462mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled diodeVorlufige Daten / Preliminary DataV = 1700VCESI = 150A / I = 300AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives

 6.1. Size:479K  infineon
ff150r17me3g.pdf

FF150R17KE4
FF150R17KE4

Technische Information / Technical InformationIGBT-ModuleFF150R17ME3GIGBT-modulesEconoDUAL3 Modul mit Trench/Feldstop IGBT und Emitter Controlled3 Diode EconoDUAL3 module with trench/fieldstop IGBT and Emitter Controlled3 diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspa

 7.1. Size:829K  infineon
ff150r12ks4 b2.pdf

FF150R17KE4
FF150R17KE4

/ Technical InformationIGBT-FF150R12KS4_B2IGBT-modules62mm C-Series IGBT62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 150A / I = 300AC nom CRM Typical Applications High Frequency Switching Application

 7.2. Size:622K  infineon
ff150r12ks4.pdf

FF150R17KE4
FF150R17KE4

Technische Information / Technical InformationIGBT-ModuleFF150R12KS4IGBT-modules62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Appli

 7.3. Size:487K  infineon
ff150r12ms4g.pdf

FF150R17KE4
FF150R17KE4

Technische Information / Technical InformationIGBT-ModuleFF150R12MS4GIGBT-modulesEconoDUAL3 Modul mit schnellem IGBT2 fr hochfrequentes Schalten EconoDUAL3 module with fast IGBT2 for high switching frequency Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 120

 7.4. Size:493K  infineon
ff150r12me3g.pdf

FF150R17KE4
FF150R17KE4

Technische Information / Technical InformationIGBT-ModuleFF150R12ME3GIGBT-modulesEconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-S

 7.5. Size:421K  infineon
ff150r12kt3g.pdf

FF150R17KE4
FF150R17KE4

Technische Information / Technical InformationIGBT-ModuleFF150R12KT3GIGBT-modules62mm C-Serien Modul mit schnellem Trench/Feldstop IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with the fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitt

 7.6. Size:667K  infineon
ff150r12yt3.pdf

FF150R17KE4
FF150R17KE4

/ Technical InformationIGBT-FF150R12YT3IGBT-modulesIGBT, / IGBT,Inverter Preliminary Data / Maximum Rated ValuesT = 25C V 1200 Vvj CESCollector-emitter voltage T = 80C, T = 150C I 150 AC vj max C nomContinuous DC collector current T = 25C, T = 150C I

 7.7. Size:590K  infineon
ff150r12rt4.pdf

FF150R17KE4
FF150R17KE4

Technische Information / Technical InformationIGBT-ModuleFF150R12RT4IGBT-modules34mm Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode34mm module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hoh

 7.8. Size:419K  infineon
ff150r12ke3g.pdf

FF150R17KE4
FF150R17KE4

Technische Information / Technical InformationIGBT-ModuleFF150R12KE3GIGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspannun

Otros transistores... FF150R12KE3G , FF150R12KS4 , FF150R12KS4_B2 , FF150R12KT3G , FF150R12ME3G , FF150R12MS4G , FF150R12RT4 , FF150R12YT3 , IRG4PC40UD , BSM100GAL120DN2 , BSM100GAR120DN2 , BSM100GB120DLC , BSM100GB120DLCK , BSM100GB120DN2 , BSM100GB120DN2K , BSM100GB170DLC , BSM100GB170DN2 .

 

 
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