BSM100GAR120DN2 Todos los transistores

 

BSM100GAR120DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM100GAR120DN2
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 800 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 80 nS
   Coesⓘ - Capacitancia de salida, typ: 1000 pF
   Paquete / Cubierta: MODULE
 

 Búsqueda de reemplazo de BSM100GAR120DN2 IGBT

   - Selección ⓘ de transistores por parámetros

 

BSM100GAR120DN2 Datasheet (PDF)

 0.1. Size:141K  eupec
bsm100gar120dn2.pdf pdf_icon

BSM100GAR120DN2

BSM 100 GAR 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAR 120 DN2 1200V 150A HALF BRIDGE GAR 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

 6.1. Size:87K  siemens
bsm100gal120dlck.pdf pdf_icon

BSM100GAR120DN2

BSM 100 GAL 120 DN2IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 120

 6.2. Size:144K  eupec
bsm100gal120dn2.pdf pdf_icon

BSM100GAR120DN2

BSM 100 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

Otros transistores... FF150R12KS4_B2 , FF150R12KT3G , FF150R12ME3G , FF150R12MS4G , FF150R12RT4 , FF150R12YT3 , FF150R17KE4 , BSM100GAL120DN2 , KGF75N65KDF , BSM100GB120DLC , BSM100GB120DLCK , BSM100GB120DN2 , BSM100GB120DN2K , BSM100GB170DLC , BSM100GB170DN2 , BSM100GB60DLC , BSM100GD60DLC .

History: RJH60A85RDPE | SHDG1025

 

 
Back to Top

 


History: RJH60A85RDPE | SHDG1025

BSM100GAR120DN2
  BSM100GAR120DN2
  BSM100GAR120DN2
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 
Back to Top

 

Popular searches

2sa1306 | b817 transistor | 2n3394 | 2sb688 | 2sd551 | ac128 datasheet | 2n5496 | 2sb600

 


 
.