BSM100GAR120DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM100GAR120DN2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 800 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 1000 pF
Paquete / Cubierta: MODULE
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BSM100GAR120DN2 Datasheet (PDF)
bsm100gar120dn2.pdf
BSM 100 GAR 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAR 120 DN2 1200V 150A HALF BRIDGE GAR 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE
bsm100gal120dlck.pdf
BSM 100 GAL 120 DN2IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 120
bsm100gal120dn2.pdf
BSM 100 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE
Otros transistores... FF150R12KS4_B2 , FF150R12KT3G , FF150R12ME3G , FF150R12MS4G , FF150R12RT4 , FF150R12YT3 , FF150R17KE4 , BSM100GAL120DN2 , IRGP4063 , BSM100GB120DLC , BSM100GB120DLCK , BSM100GB120DN2 , BSM100GB120DN2K , BSM100GB170DLC , BSM100GB170DN2 , BSM100GB60DLC , BSM100GD60DLC .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2