BSM100GB120DN2 Todos los transistores

 

BSM100GB120DN2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSM100GB120DN2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 800 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃

trⓘ - Tiempo de subida, typ: 80 nS

Coesⓘ - Capacitancia de salida, typ: 1000 pF

Encapsulados: MODULE

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BSM100GB120DN2 datasheet

 ..1. Size:166K  eupec
bsm100gb120dn2.pdf pdf_icon

BSM100GB120DN2

BSM 100 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE

 0.1. Size:209K  eupec
bsm100gb120dn2k.pdf pdf_icon

BSM100GB120DN2

BSM 100 GB 120 DN2K IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 120 DN2K 1200V 145A HALF-BRIDGE 1 C67070-A2107-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage V

 2.1. Size:242K  infineon
bsm100gb120dlc.pdf pdf_icon

BSM100GB120DN2

Technische Information / technical information IGBT-Module BSM100GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro

 2.2. Size:229K  eupec
bsm100gb120dlck.pdf pdf_icon

BSM100GB120DN2

Technische Information / technical information IGBT-Module BSM100GB120DLCK IGBT-modules IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 100 A DC-collector current T = 25 C, T = 150 C I 205 A Periodischer Kollektor Spitzen

Otros transistores... FF150R12MS4G , FF150R12RT4 , FF150R12YT3 , FF150R17KE4 , BSM100GAL120DN2 , BSM100GAR120DN2 , BSM100GB120DLC , BSM100GB120DLCK , RJP63K2DPP-M0 , BSM100GB120DN2K , BSM100GB170DLC , BSM100GB170DN2 , BSM100GB60DLC , BSM100GD60DLC , BSM50GAL100D , BSM50GB100D , BSM50GB120DLC .

History: IXSH20N60U1 | STGFW20V60F | IRG8P25N120KD

 

 

 


History: IXSH20N60U1 | STGFW20V60F | IRG8P25N120KD

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