BSM50GD60DLC Todos los transistores

 

BSM50GD60DLC IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSM50GD60DLC

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃

trⓘ - Tiempo de subida, typ: 9 nS

Encapsulados: MODULE

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BSM50GD60DLC datasheet

 ..1. Size:85K  eupec
bsm50gd60dlc e3226.pdf pdf_icon

BSM50GD60DLC

Technische Information / Technical Information IGBT-Module BSM 50 GD 60 DLC E3226 IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage TC= 80 C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC= 25 C IC 70 A Periodischer Kollektor Spitzenst

 ..2. Size:209K  eupec
bsm50gd60dlc.pdf pdf_icon

BSM50GD60DLC

Technische Information / Technical Information IGBT-Module BSM 50 GD 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage TC= 80 C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC= 25 C IC 70 A Periodischer Kollektor Spitzenstrom t

 7.1. Size:278K  eupec
bsm50gd120dn2.pdf pdf_icon

BSM50GD60DLC

BSM 50 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-

 7.2. Size:59K  eupec
bsm50gd120dlc.pdf pdf_icon

BSM50GD60DLC

Technische Information / Technical Information IGBT-Module BSM50GD120DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 85 A Periodischer Kollektor Spitzenstrom

Otros transistores... BSM50GB120DN2 , BSM50GB170DN2 , BSM50GB60DLC , BSM50GD120DLC , BSM50GD120DN2 , BSM50GD120DN2E3226 , BSM50GD120DN2G , BSM50GD170DL , CRG60T60AN3H , BSM50GD60DLC_E3226 , BSM50GP120 , BSM50GP60 , SKM450GB12E4 , SKM50GAL12T4 , SKM50GB12T4 , SKM50GB12V , SKM600GA12E4 .

History: BSM100GB120DLCK

 

 

 


History: BSM100GB120DLCK

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