SKM50GB12V IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SKM50GB12V
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 79 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Coesⓘ - Capacitancia de salida, typ: 300 pF
Encapsulados: MODULE
Búsqueda de reemplazo de SKM50GB12V IGBT
- Selección ⓘ de transistores por parámetros
SKM50GB12V datasheet
skm50gb12v.pdf
SKM50GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 79 A Tj = 175 C Tc =80 C 60 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 15 V Tj = 125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 65 A Tj = 175 C SKM50GB12V Tc =80 C 49 A IFnom 50 A Target Da
skm50gb12t4.pdf
SKM50GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 81 A Tj = 175 C Tc =80 C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 65 A Tj = 175 C SKM50GB12T4 Tc =80 C 49 A
skm50gb063d.pdf
SKM50GB063D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 600 V IC Tc =25 C 70 A Tj = 150 C Tc =75 C 51 A ICnom 50 A ICRM ICRM = 2xICnom 100 A VGES -20 ... 20 V VCC = 300 V SEMITRANS 2 tpsc VGE 20 V Tj = 125 C 10 s VCES 600 V Tj -55 ... 150 C Superfast NPT-IGBT Inverse diode Modules IF Tc =25 C 75 A Tc =80 C 45 A SKM50GB0
Otros transistores... BSM50GD170DL , BSM50GD60DLC , BSM50GD60DLC_E3226 , BSM50GP120 , BSM50GP60 , SKM450GB12E4 , SKM50GAL12T4 , SKM50GB12T4 , RJP63F3DPP-M0 , SKM600GA12E4 , SKM600GA12T4 , SKM600GA12V , SKM600GA176D , SKM600GB066D , SKM600GB126D , SII100N06 , SII100N12 .
History: STGB30V60F | ATT050K065FQC | SKM150GAL123D
History: STGB30V60F | ATT050K065FQC | SKM150GAL123D
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Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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