MMIX1B20N300C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMIX1B20N300C
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 417
Tensión máxima colector-emisor |Vce|, V: 3000
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 50
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 6
Tensión máxima de puerta-umbral |VGE(th)|, V: 5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 12
Capacitancia de salida (Cc), typ, pF: 440
Carga total de la puerta (Qg), typ, nC: 425
Paquete / Cubierta: CHIP
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MMIX1B20N300C Datasheet (PDF)
mmix1b20n300c.pdf
Advance Technical InformationHigh Voltage,VCES = 3000VMMIX1B20N300CHigh Frequency,IC110 = 20ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)CGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VEVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V Isolated TabVGEM Tr
mmix1b15n300c.pdf
Advance Technical InformationHigh Voltage,VCES = 3000VMMIX1B15N300CHigh Frequency,IC110 = 15ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)CGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VEVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V Isolated TabVGEM Tr
mmix1y82n120c3h1.pdf
Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VMMIX1Y82N120C3H1GenX3TM w/ Diode IC110 = 36A VCE(sat) 3.4V (Electrically Isolated Tab)tfi(typ) = 93nsHigh-Speed IGBTCfor 20-50 kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 V
mmix1x200n60b3h1.pdf
Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT MMIX1X200N60B3H1IC110 = 72AGenX3TM w/Diode VCE(sat) 1.7V (Electrically Isolated Tab)tfi(typ) = 110nsExtreme Light Punch ThroughCIGBT for 10-30kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Conti
mmix1x340n65b4.pdf
Advance Technical InformationVCES = 650VXPTTM 650V IGBT MMIX1X340N65B4IC90 = 295AGenX4TM VCE(sat) 1.7V tfi(typ) = 80nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingCGE Maximum Ratingsymbol Test ConditionsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE =
mmix1f420n10t.pdf
Advance Technical InformationGigaMOSTM TrenchTMVDSS = 100VMMIX1F420N10THiperFETTMID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns(Electrically Isolated Tab)DN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 V Isolated Tab
mmix1f360n15t2.pdf
Preliminary Technical InformationTrenchT2TM GigaMOSTMVDSS = 150VMMIX1F360N15T2HiperFETTMID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C
mmix1x200n60b3.pdf
Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT MMIX1X200N60B3IC110 = 120AGenX3TM VCE(sat) 1.7V (Electrically Isolated Tab)tfi(typ) = 110nsExtreme Light Punch ThroughCIGBT for 10-30kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VEVCGR TJ = 25C to 175C, RGE = 1M 600 VVGES Continuous 2
mmix1f132n50p3.pdf
Advance Technical InformationPolar3TM HiPerFETTM VDSS = 500VMMIX1F132N50P3Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250nsDN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V Isolated TabVDGR TJ =
mmix1g75n250.pdf
Advance Technical InformationHigh Voltage IGBT VCES = 2500VMMIX1G75N250IC90 = 65AFor Capacitor Discharge VCE(sat) 2.9VApplications( Electrically Isolated Tab)CGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VEVCES TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 V Isolated TabVGEM Transient 30 VCIC25
mmix1f180n25t.pdf
Advance Technical InformationGigaMOSTM TrenchTMVDSS = 250VMMIX1F180N25THiperFETTMID25 = 130A Power MOSFET RDS(on) 13m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 250 VV
mmix1g320n60b3.pdf
Advance Technical InformationGenX3TM 600V VCES = 600VMMIX1G320N60B3IC25 = 400AIGBTVCE(sat) 1.50VMedium-Speed Low-Vsat PTIGBTs for 5-40 kHz SwitchingCGESymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V Isolated TabVCGR TJ = 25C to 150C, RGE = 1M 600 VCVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 4
mmix1x100n60b3h1.pdf
Preliminary Technical InformationXPTTM 600V VCES = 600VMMIX1X100N60B3H1GenX3TM w/ DiodeIC90 = 60AVCE(sat) 1.80V(Electrically Isolated Tab)CMedium-Speed Low-Vsat PTIGBT for 10-30 kHz SwitchingGSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V Isolated TabVGES Continuous 20 V
mmix1f210n30p3.pdf
Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VMMIX1F210N30P3Power MOSFET ID25 = 108A RDS(on) 16m (Electrically Isolated Tab)trr 250nsN-Channel Enhancement ModeDAvalanche RatedFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 V Isolated TabVDGR TJ
mmix1y100n120c3h1.pdf
Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VMMIX1Y100N120C3H1GenX3TM w/ Diode IC110 = 40A VCE(sat) 3.5V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingCGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 V Isolated TabVGEM Trans
mmix1f44n100q3.pdf
Advance Technical InformationHiperFETTM VDSS = 1000VMMIX1F44N100Q3Power MOSFET ID25 = 30A Q3-Class RDS(on) 245m trr 300ns(Electrically Isolated Tab)DN-Channel Enhancement ModeFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 V Isolated TabVDGR TJ = 25C to 150
mmix1f230n20t.pdf
Advance Technical InformationGigaMOSTM TrenchTMVDSS = 200VMMIX1F230N20THiperFETTMID25 = 168A Power MOSFET RDS(on) 8.3m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C 200 V
mmix1f160n30t.pdf
Advance Technical InformationGigaMOSTM TrenchTMVDSS = 300VMMIX1F160N30THiperFETTMID25 = 102A Power MOSFET RDS(on) 20m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 300 VV
mmix1g120n120a3v1.pdf
Advance Technical InformationGenX3TM 1200V VCES = 1200VMMIX1G120N120A3V1IGBT w/ DiodeIC110 = 105AVCE(sat) 2.2V(Electrically Isolated Tab)CUltra-Low-Vsat PT IGBT for3kHz SwitchingGSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 V Isolated TabVGES Continuous 20 VCVGEM Tr
mmix1f40n110p.pdf
Advance Technical InformationPolarTM HiperFETTM VDSS = 1100VMMIX1F40N110PPower MOSFET ID25 = 24A RDS(on) 290m (Electrically Isolated Tab)trr 300nsDN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1100 V Isolated TabVDGR TJ
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ