MMIX1X340N65B4 Todos los transistores

 

MMIX1X340N65B4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMIX1X340N65B4
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 450 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 76 nS
   Coesⓘ - Capacitancia de salida, typ: 670 pF
   Paquete / Cubierta: PLASTIC-24PIN

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MMIX1X340N65B4 Datasheet (PDF)

 ..1. Size:241K  ixys
mmix1x340n65b4.pdf

MMIX1X340N65B4
MMIX1X340N65B4

Advance Technical InformationVCES = 650VXPTTM 650V IGBT MMIX1X340N65B4IC90 = 295AGenX4TM VCE(sat) 1.7V tfi(typ) = 80nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingCGE Maximum Ratingsymbol Test ConditionsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE =

 8.1. Size:243K  ixys
mmix1x200n60b3h1.pdf

MMIX1X340N65B4
MMIX1X340N65B4

Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT MMIX1X200N60B3H1IC110 = 72AGenX3TM w/Diode VCE(sat) 1.7V (Electrically Isolated Tab)tfi(typ) = 110nsExtreme Light Punch ThroughCIGBT for 10-30kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Conti

 8.2. Size:233K  ixys
mmix1x200n60b3.pdf

MMIX1X340N65B4
MMIX1X340N65B4

Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT MMIX1X200N60B3IC110 = 120AGenX3TM VCE(sat) 1.7V (Electrically Isolated Tab)tfi(typ) = 110nsExtreme Light Punch ThroughCIGBT for 10-30kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VEVCGR TJ = 25C to 175C, RGE = 1M 600 VVGES Continuous 2

 8.3. Size:299K  ixys
mmix1x100n60b3h1.pdf

MMIX1X340N65B4
MMIX1X340N65B4

Preliminary Technical InformationXPTTM 600V VCES = 600VMMIX1X100N60B3H1GenX3TM w/ DiodeIC90 = 60AVCE(sat) 1.80V(Electrically Isolated Tab)CMedium-Speed Low-Vsat PTIGBT for 10-30 kHz SwitchingGSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V Isolated TabVGES Continuous 20 V

Otros transistores... SII50N06 , SII75N06 , SII75N12 , MMIX1B15N300C , MMIX1B20N300C , MMIX1G120N120A3V1 , MMIX1X200N60B3 , MMIX1X200N60B3H1 , CRG60T60AK3HD , MMIX1Y100N120C3H1 , MMIX1Y82N120C3H1 , MMIX2S50N60B4D1 , MMIX4B22N300 , SIGC03T60E , SIGC03T60SE , SIGC03T60SNC , SIGC04T60 .

 

 
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