MMIX1Y100N120C3H1 Todos los transistores

 0.1. Size:273K  ixys
 mmix1y100n120c3h1.pdf

Preliminary Technical Information 1200V XPTTM IGBT VCES = 1200V MMIX1Y100N120C3H1 GenX3TM w/ Diode IC110 = 40A VCE(sat) 3.5V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V Isolated Tab VGEM Trans

 8.1. Size:240K  ixys
 mmix1y82n120c3h1.pdf

Preliminary Technical Information 1200V XPTTM IGBT VCES = 1200V MMIX1Y82N120C3H1 GenX3TM w/ Diode IC110 = 36A VCE(sat) 3.4V (Electrically Isolated Tab) tfi(typ) = 93ns High-Speed IGBT C for 20-50 kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V

 9.1. Size:243K  ixys
 mmix1x200n60b3h1.pdf

Preliminary Technical Information VCES = 600V XPTTM 600V IGBT MMIX1X200N60B3H1 IC110 = 72A GenX3TM w/Diode VCE(sat) 1.7V (Electrically Isolated Tab) tfi(typ) = 110ns Extreme Light Punch Through C IGBT for 10-30kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Conti

 9.2. Size:258K  ixys
 mmix1b20n300c.pdf

Advance Technical Information High Voltage, VCES = 3000V MMIX1B20N300C High Frequency, IC110 = 20A BiMOSFETTM Monolithic VCE(sat) 6.0V Bipolar MOS Transistor (Electrically Isolated Tab) C G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V E VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V Isolated Tab VGEM Tr

 9.3. Size:241K  ixys
 mmix1x340n65b4.pdf

Advance Technical Information VCES = 650V XPTTM 650V IGBT MMIX1X340N65B4 IC90 = 295A GenX4TM VCE(sat) 1.7V tfi(typ) = 80ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G E Maximum Ratings ymbol Test Conditions VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE =

 9.4. Size:225K  ixys
 mmix1f420n10t.pdf

Advance Technical Information GigaMOSTM TrenchTM VDSS = 100V MMIX1F420N10T HiperFETTM ID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V Isolated Tab

 9.5. Size:233K  ixys
 mmix1f360n15t2.pdf

Preliminary Technical Information TrenchT2TM GigaMOSTM VDSS = 150V MMIX1F360N15T2 HiperFETTM ID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 175 C

 9.6. Size:233K  ixys
 mmix1x200n60b3.pdf

Preliminary Technical Information VCES = 600V XPTTM 600V IGBT MMIX1X200N60B3 IC110 = 120A GenX3TM VCE(sat) 1.7V (Electrically Isolated Tab) tfi(typ) = 110ns Extreme Light Punch Through C IGBT for 10-30kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V E VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VGES Continuous 2

 9.7. Size:182K  ixys
 mmix1f132n50p3.pdf

Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V MMIX1F132N50P3 Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250ns D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V Isolated Tab VDGR TJ =

 9.8. Size:225K  ixys
 mmix1g75n250.pdf

Advance Technical Information High Voltage IGBT VCES = 2500V MMIX1G75N250 IC90 = 65A For Capacitor Discharge VCE(sat) 2.9V Applications ( Electrically Isolated Tab) C G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 2500 V E VCES TJ = 25 C to 150 C, RGE = 1M 2500 V VGES Continuous 20 V Isolated Tab VGEM Transient 30 V C IC25

 9.9. Size:183K  ixys
 mmix1f180n25t.pdf

Advance Technical Information GigaMOSTM TrenchTM VDSS = 250V MMIX1F180N25T HiperFETTM ID25 = 130A Power MOSFET RDS(on) 13m trr 200ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 150 C 250 V V

 9.10. Size:243K  ixys
 mmix1g320n60b3.pdf

Advance Technical Information GenX3TM 600V VCES = 600V MMIX1G320N60B3 IC25 = 400A IGBT VCE(sat) 1.50V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V Isolated Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 4

 9.11. Size:299K  ixys
 mmix1x100n60b3h1.pdf

Preliminary Technical Information XPTTM 600V VCES = 600V MMIX1X100N60B3H1 GenX3TM w/ Diode IC90 = 60A VCE(sat) 1.80V (Electrically Isolated Tab) C Medium-Speed Low-Vsat PT IGBT for 10-30 kHz Switching G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Isolated Tab VGES Continuous 20 V

 9.12. Size:181K  ixys
 mmix1f210n30p3.pdf

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V MMIX1F210N30P3 Power MOSFET ID25 = 108A RDS(on) 16m (Electrically Isolated Tab) trr 250ns N-Channel Enhancement Mode D Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V Isolated Tab VDGR TJ

 9.13. Size:176K  ixys
 mmix1f44n100q3.pdf

 9.14. Size:180K  ixys
 mmix1f230n20t.pdf

Advance Technical Information GigaMOSTM TrenchTM VDSS = 200V MMIX1F230N20T HiperFETTM ID25 = 168A Power MOSFET RDS(on) 8.3m trr 200ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 175 C 200 V

 9.15. Size:183K  ixys
 mmix1f160n30t.pdf

Advance Technical Information GigaMOSTM TrenchTM VDSS = 300V MMIX1F160N30T HiperFETTM ID25 = 102A Power MOSFET RDS(on) 20m trr 200ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 150 C 300 V V

 9.16. Size:246K  ixys
 mmix1g120n120a3v1.pdf

Advance Technical Information GenX3TM 1200V VCES = 1200V MMIX1G120N120A3V1 IGBT w/ Diode IC110 = 105A VCE(sat) 2.2V (Electrically Isolated Tab) C Ultra-Low-Vsat PT IGBT for 3kHz Switching G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V Isolated Tab VGES Continuous 20 V C VGEM Tr

 9.17. Size:256K  ixys
 mmix1b15n300c.pdf

Advance Technical Information High Voltage, VCES = 3000V MMIX1B15N300C High Frequency, IC110 = 15A BiMOSFETTM Monolithic VCE(sat) 6.0V Bipolar MOS Transistor (Electrically Isolated Tab) C G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V E VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V Isolated Tab VGEM Tr

 9.18. Size:177K  ixys
 mmix1f40n110p.pdf

Advance Technical Information PolarTM HiperFETTM VDSS = 1100V MMIX1F40N110P Power MOSFET ID25 = 24A RDS(on) 290m (Electrically Isolated Tab) trr 300ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1100 V Isolated Tab VDGR TJ