MMIX4B22N300 Todos los transistores

 

MMIX4B22N300 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMIX4B22N300
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 3000 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 38 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 360 nS
   Coesⓘ - Capacitancia de salida, typ: 85 pF
   Qgⓘ - Carga total de la puerta, typ: 110 nC
   Paquete / Cubierta: PLASTIC-24PIN
     - Selección de transistores por parámetros

 

MMIX4B22N300 Datasheet (PDF)

 ..1. Size:245K  ixys
 mmix4b22n300.pdf pdf_icon

MMIX4B22N300

Advance Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorC2C1VCE(sat) 2.7VG1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4Symbol Test Conditions Maximum RatingsG4E3E4C1VCES TJ = 25C to 150C 3000

 7.1. Size:247K  ixys
 mmix4b20n300.pdf pdf_icon

MMIX4B22N300

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B20N300BIMOSFETTM MonolithicIC110 = 14ABipolar MOS TransistorC2C1 VCE(sat) 3.2V G1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4G4E3E4C1Symbol Test Conditions Maximum RatingsG1VCES TC = 25C to 150C 3000 VE1C3VCGR TJ = 25C to 150C

 8.1. Size:252K  ixys
 mmix4b12n300.pdf pdf_icon

MMIX4B22N300

Preliminary Technical InformationHigh Voltage, High GainMMIX4B12N300 VCES = 3000VBIMOSFETTM MonolithicIC110 = 11ABipolar MOS TransistorVCE(sat) 3.2VC2C1G1G2(Electrically Isolated Tab)E2C4 E1C3G3 G4C2G2E3E4E2C4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TC = 25C to 150C 3000 V Isolated TabE3E4VCG

 9.1. Size:244K  ixys
 mmix4g20n250.pdf pdf_icon

MMIX4B22N300

Advance Technical InformationHigh Voltage IGBT VCES = 2500VMMIX4G20N250For Capacitor DischargeIC25 = 23AApplicationsVCE(sat) 3.1VC1 C2Q1 Q2( Electrically Isolated Tab)G2G1E2C4E1C3Q3 Q4 C2H-Bridge ConfigurationG2G4E2C4G3E3E4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TJ = 25C to 150C 2500 VVCGR T

MOSTRAR MÁS

Otros transistores... MMIX1B20N300C , MMIX1G120N120A3V1 , MMIX1X200N60B3 , MMIX1X200N60B3H1 , MMIX1X340N65B4 , MMIX1Y100N120C3H1 , MMIX1Y82N120C3H1 , MMIX2S50N60B4D1 , IKW30N60H3 , SIGC03T60E , SIGC03T60SE , SIGC03T60SNC , SIGC04T60 , SIGC04T60E , SIGC04T60G , SIGC04T60GE , SIGC04T60GS .

History: IXSM25N100 | IRGIB4630DPBF

 

 
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