SIGC04T60E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SIGC04T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag

SIGC04T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag

SIGC04T60G IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pac

SIGC04T60GE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packa

SIGC04T60GS IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pa

SIGC04T60GSE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size Package