SIGC04T60GE Todos los transistores

 

SIGC04T60GE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIGC04T60GE

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.9

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 6

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF: 28

Empaquetado / Estuche: CHIP

Búsqueda de reemplazo de SIGC04T60GE - IGBT

 

 

SIGC04T60GE Datasheet (PDF)

1.1. sigc04t60gse.pdf Size:118K _igbt

SIGC04T60GE
SIGC04T60GE

 SIGC04T60GSE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods • easy paralleling E • resonant applications Chip Type VCE IC Die Size Package

1.2. sigc04t60ge.pdf Size:58K _igbt

SIGC04T60GE
SIGC04T60GE

 SIGC04T60GE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packa

 1.3. sigc04t60.pdf Size:56K _igbt

SIGC04T60GE
SIGC04T60GE

 SIGC04T60E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packag

1.4. sigc04t60e.pdf Size:56K _igbt

SIGC04T60GE
SIGC04T60GE

 SIGC04T60E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packag

 1.5. sigc04t60gs.pdf Size:72K _igbt

SIGC04T60GE
SIGC04T60GE

SIGC04T60GS IGBT3 Chip FEATURES: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE ICn Die Size Pa

1.6. sigc04t60g.pdf Size:76K _igbt

SIGC04T60GE
SIGC04T60GE

SIGC04T60G IGBT3 Chip FEATURES: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE ICn Die Size Pac

Otros transistores... TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , G12N60C3D , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W .

Back to Top

 


SIGC04T60GE
  SIGC04T60GE
  SIGC04T60GE
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |

 

 

Back to Top