IRGC100B120KB Todos los transistores

 

IRGC100B120KB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGC100B120KB

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 2.2

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 100

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: CHIP

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IRGC100B120KB Datasheet (PDF)

1.1. irgc100b120k.pdf Size:15K _international_rectifier

IRGC100B120KB

PD - 93874 IRGC100B120KB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Mot

1.2. irgc100b120u.pdf Size:15K _international_rectifier

IRGC100B120KB

PD - 93873 IRGC100B120UB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor C

 1.3. irgc100b120kb.pdf Size:43K _international_rectifier

IRGC100B120KB

1.4. irgc100b120ub.pdf Size:43K _international_rectifier

IRGC100B120KB

 1.5. irgc100b120kb.pdf Size:43K _igbt_a

IRGC100B120KB



1.6. irgc100b120ub.pdf Size:94K _igbt_a

IRGC100B120KB
IRGC100B120KB

PD - 93873B IRGC100B120UB Die in Wafer Form 1200V Features C • GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A • Low VCE(on) VCE(on) typ.= 3.1V @ • 10µs Short Circuit Capability IC(nom) @ 25°C • Square RBSOA • Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated E • Benchmark Efficiency above 20KHz 150mm Wafer •

Otros transistores... TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , G12N60C3D , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W .

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Recientemente añadidas las descripciónes de los transistores

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |

 

 

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