IRGC100B60UB Todos los transistores

 

IRGC100B60UB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGC100B60UB

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.8

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 100

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: CHIP

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IRGC100B60UB Datasheet (PDF)

1.1. irgc100b60kb.pdf Size:79K _igbt_a

IRGC100B60UB

PD - 94618A IRGC100B60KB Die in Wafer Form Features 600V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=100A • Low VCE(on) VCE(on) typ.=1.9V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Motor Control Applications E

1.2. irgc100b60ub.pdf Size:34K _igbt_a

IRGC100B60UB

PD - 94716 IRGC100B60UB Die in Wafer Form Features 600V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=100A • Low VCE(on) VCE(on) typ. = 2.8V • 10µs Short Circuit Capability • Square RBSOA @ IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient UPS IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for UPS and Welding Applications E 150mm Waf

 2.1. irgc100b120u.pdf Size:15K _international_rectifier

IRGC100B60UB

PD - 93873 IRGC100B120UB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor C

2.2. irgc100b120ub.pdf Size:43K _international_rectifier

IRGC100B60UB

 2.3. irgc100b120k.pdf Size:15K _international_rectifier

IRGC100B60UB

PD - 93874 IRGC100B120KB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Mot

2.4. irgc100b120kb.pdf Size:43K _international_rectifier

IRGC100B60UB

 2.5. irgc100b120ub.pdf Size:94K _igbt_a

IRGC100B60UB
IRGC100B60UB

PD - 93873B IRGC100B120UB Die in Wafer Form 1200V Features C • GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A • Low VCE(on) VCE(on) typ.= 3.1V @ • 10µs Short Circuit Capability IC(nom) @ 25°C • Square RBSOA • Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated E • Benchmark Efficiency above 20KHz 150mm Wafer •

2.6. irgc100b120kb.pdf Size:43K _igbt_a

IRGC100B60UB



Otros transistores... SIGC04T60GS , SIGC04T60GSE , SIGC04T65E , SIGC05T60SNC , IGC70T120T6RL , IRGC100B120KB , IRGC100B120UB , IRGC100B60KB , STGW38IH130D , IRGC15B120KB , IRGC15B120UB , IRGC16B120KB , IRGC16B60KB , GT50JR22 , RJP30H2A , FGA60N65SMD , FGA6065ADF .

 

 
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