IRGC100B60UB Todos los transistores

PD - 94716 IRGC100B60UB Die in Wafer Form Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)=100A Low VCE(on) VCE(on) typ. = 2.8V 10 s Short Circuit Capability Square RBSOA @ IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient UPS IGBT G Benefits Short Circuit Rated Benchmark Efficiency for UPS and Welding Applications E 150mm Waf... See More ⇒

PD - 94618A IRGC100B60KB Die in Wafer Form Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)=100A Low VCE(on) VCE(on) typ.=1.9V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor Control Applications E ... See More ⇒

PD - 93874 IRGC100B120KB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 2.2V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark E... See More ⇒

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PD - 93873B IRGC100B120UB Die in Wafer Form 1200V Features C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 3.1V @ 10 s Short Circuit Capability IC(nom) @ 25 C Square RBSOA Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated E Benchmark Efficiency above 20KHz 150mm Wafer ... See More ⇒

PD - 93873 IRGC100B120UB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 3.1V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated Benchmark Effic... See More ⇒