IRGC100B60UB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGC100B60UB 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃
Encapsulados: CHIP
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IRGC100B60UB datasheet
irgc100b60ub.pdf
PD - 94716 IRGC100B60UB Die in Wafer Form Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)=100A Low VCE(on) VCE(on) typ. = 2.8V 10 s Short Circuit Capability Square RBSOA @ IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient UPS IGBT G Benefits Short Circuit Rated Benchmark Efficiency for UPS and Welding Applications E 150mm Waf
irgc100b60kb.pdf
PD - 94618A IRGC100B60KB Die in Wafer Form Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)=100A Low VCE(on) VCE(on) typ.=1.9V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor Control Applications E
irgc100b120k.pdf
PD - 93874 IRGC100B120KB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 2.2V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark E
Otros transistores... SIGC04T60GS, SIGC04T60GSE, SIGC04T65E, SIGC05T60SNC, IGC70T120T6RL, IRGC100B120KB, IRGC100B120UB, IRGC100B60KB, XNF15N60T, IRGC15B120KB, IRGC15B120UB, IRGC16B120KB, IRGC16B60KB, GT50JR22, RJP30H2A, FGA60N65SMD, FGA6065ADF
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