IRG4BC10KD Todos los transistores

 

IRG4BC10KD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4BC10KD

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 38

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.62

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 5

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220AB

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IRG4BC10KD Datasheet (PDF)

1.1. irg4bc10k.pdf Size:161K _international_rectifier

IRG4BC10KD
IRG4BC10KD

 D IRG4BC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C • Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 • Industry standard TO-220

1.2. irg4bc10kd.pdf Size:210K _international_rectifier

IRG4BC10KD
IRG4BC10KD

PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V VCE(on) typ. = 2.39V • Combines low conduction losses with high G switching speed • Tighter parameter distribut

 2.1. irg4bc10sd-s.pdf Size:220K _international_rectifier

IRG4BC10KD
IRG4BC10KD

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V • Very Tight Vce(on) distrib

2.2. irg4bc10sd.pdf Size:314K _international_rectifier

IRG4BC10KD
IRG4BC10KD

PD -91784B IRG4BC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1Vtyp. @ 2A VCES = 600V • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V • Very Tight Vce(on) distribution G • IGB

 2.3. irg4bc10sd-l.pdf Size:220K _international_rectifier

IRG4BC10KD
IRG4BC10KD

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V • Very Tight Vce(on) distrib

2.4. irg4bc10ud.pdf Size:23K _international_rectifier

IRG4BC10KD
IRG4BC10KD

 PD 91677B IRG4BC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Features Features Features Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in VCE(on) typ. = 2.15V resonant mode G • Generation 4 IGBT design provides tighter @VGE = 15V, IC = 5.0A parameter

 2.5. irg4bc10s.pdf Size:267K _international_rectifier

IRG4BC10KD
IRG4BC10KD

PD - 91786B IRG4BC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in VCE(on) typ. = 1.10V Chopper Applications G • Very Tight Vce(on) distribution • Indust

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