HCKW75N65BH2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HCKW75N65BH2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 469
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 150
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 115
Capacitancia de salida (Cc), typ, pF: 244
Paquete / Cubierta: TO247
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HCKW75N65BH2 Datasheet (PDF)
hckw75n65bh2.pdf
HCKW75N65BH2@Trench-FS Cool-Watt IGBTHCKW75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo
hckw75n65gh2.pdf
HCKW75N65GH2@Trench-FS Cool-Watt IGBTHCKW75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo
hckw75n65fh2.pdf
HCKW75N65FH2@Trench-FS Cool-Watt IGBTHCKW75N65FH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo
Otros transistores... 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , 1MBH50D-060 , HCKW40N65H2 , HCKW60N65BH2A , HCKW60N65CH2A , IKW30N60H3 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 , 2PG402 .
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