1MBI100U4F-120L-50 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 1MBI100U4F-120L-50
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 540 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 100 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de 1MBI100U4F-120L-50 IGBT
Principales características: 1MBI100U4F-120L-50
1mbi100u4f-120l-50.pdf
http //www.fujielectric.com/products/semiconductor/ 1MBI100U4F-120L-50 IGBT Modules IGBT MODULE (U series) 1200V / 100A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratin
1mbi1600u4c-120.pdf
1MBI1600U4C-120 IGBT Modules IGBT MODULE (U series) 1200V / 1600A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unl
1mbi1500ue-330-02.pdf
. ./ 8(017)200-56-46 www.fotorele.net e mail minsk17@tut.by TARGET SPECIFICATION ( TENTATIVE ) Device Name IGBT Module Type Name 1MBI1500UE-330-02 Spec. No. MT5F 21160 K.Haraguchi Dec.-10- 08 T.Koga Dec.-10- 08 1 S.Igarashi MT5F21160 9 REVISIONS
1mbi1600u4c-170.pdf
1MBI1600U4C-170 IGBT Modules IGBT MODULE (U series) 1700V / 1600A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unl
Otros transistores... STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 , AOB15B65M1 , GT60M104 , FGB40N60SM , IHW20N120R2 , GT50JR22 , 1MBI1200U4C-120 , 1MBI1200U4C-170 , 1MBI1200UE-330 , 1MBI1500UE-330-02 , 1MBI150NH-060 , 1MBI150NK-060 , 1MBI1600U4C-120 , 1MBI1600U4C-170 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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