IRG4BC10SD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4BC10SD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 38 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 14 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.58 V @25℃

trⓘ - Tiempo de subida, typ: 32 nS

Coesⓘ - Capacitancia de salida, typ: 30 pF

Encapsulados: TO220AB

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IRG4BC10SD datasheet

 ..1. Size:314K  international rectifier
 irg4bc10sd.pdf pdf_icon

IRG4BC10SD

PD -91784B IRG4BC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Extremely low voltage drop 1.1Vtyp. @ 2A VCES = 600V S-Series Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distribution G IGB

 0.1. Size:220K  international rectifier
 irg4bc10sd-l.pdf pdf_icon

IRG4BC10SD

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Extremely low voltage drop 1.1Vtyp. @ 2A S-Series Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

 0.2. Size:220K  international rectifier
 irg4bc10sd-s.pdf pdf_icon

IRG4BC10SD

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Extremely low voltage drop 1.1Vtyp. @ 2A S-Series Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

 5.1. Size:267K  international rectifier
 irg4bc10s.pdf pdf_icon

IRG4BC10SD

PD - 91786B IRG4BC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Extremely low voltage drop; 1.1V typical at 2A S-Speed Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in VCE(on) typ. = 1.10V Chopper Applications G Very Tight Vce(on) distribution Indust

MOSTRAR MÁS

Otros transistores... HGTP7N60A4D, HGTP7N60B3, HGTP7N60B3D, HGTP7N60C3, HGTP7N60C3D, IRG4BC10K, IRG4BC10KD, IRG4BC10S, GT30F133, IRG4BC10UD, IRG4BC20F, IRG4BC20FD, IRG4BC20K, IRG4BC20KD, IRG4BC20KD-S, IRG4BC20K-S, IRG4BC20S