1MBI1600U4C-170 Todos los transistores

 

1MBI1600U4C-170 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 1MBI1600U4C-170
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 9760 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 2400 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.47 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 850 nS
   Paquete / Cubierta: MODULE
 

 Búsqueda de reemplazo de 1MBI1600U4C-170 IGBT

   - Selección ⓘ de transistores por parámetros

 

1MBI1600U4C-170 Datasheet (PDF)

 0.1. Size:459K  fuji
1mbi1600u4c-170.pdf pdf_icon

1MBI1600U4C-170

1MBI1600U4C-170 IGBT ModulesIGBT MODULE (U series)1700V / 1600A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unl

 1.1. Size:497K  fuji
1mbi1600u4c-120.pdf pdf_icon

1MBI1600U4C-170

1MBI1600U4C-120 IGBT ModulesIGBT MODULE (U series)1200V / 1600A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unl

 9.1. Size:924K  fuji
1mbi1500ue-330-02.pdf pdf_icon

1MBI1600U4C-170

. ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.byTARGETSPECIFICATION( TENTATIVE )Device Name : IGBT ModuleType Name : 1MBI1500UE-330-02Spec. No. :MT5F 21160K.HaraguchiDec.-10-08T.KogaDec.-10-081S.IgarashiMT5F211609REVISIONS

 9.2. Size:262K  fuji
1mbi100u4f-120l-50.pdf pdf_icon

1MBI1600U4C-170

http://www.fujielectric.com/products/semiconductor/1MBI100U4F-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 100A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratin

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRG4BC20F | IHW40N120R5 | BT15T60A9F | KM435V

 

 
Back to Top

 


History: IRG4BC20F | IHW40N120R5 | BT15T60A9F | KM435V

1MBI1600U4C-170
  1MBI1600U4C-170
  1MBI1600U4C-170
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 
Back to Top

 

Popular searches

6r190p6 datasheet | 2n270 | 2n2924 | mpsa65 | 2sa794 | 2sa816 | 2sc897 datasheet | 2sd389

 


 
.