IRG4BC10UD Datasheet. Equivalente

 ..1. Size:23K  international rectifier
 irg4bc10ud.pdf

PD 91677B IRG4BC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Features Features Features Features UltraFast Optimized for high operating up to 80 kHz in hard switching, >200 kHz in VCE(on) typ. = 2.15V resonant mode G Generation 4 IGBT design provides tighter @VGE = 15V, IC = 5.0A parameter

 6.1. Size:210K  international rectifier
 irg4bc10kd.pdf

PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V VCE(on) typ. = 2.39V Combines low conduction losses with high G switching speed Tighter parameter distribut

 6.2. Size:220K  international rectifier
 irg4bc10sd-l.pdf

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Extremely low voltage drop 1.1Vtyp. @ 2A S-Series Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

 6.3. Size:267K  international rectifier
 irg4bc10s.pdf

PD - 91786B IRG4BC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Extremely low voltage drop; 1.1V typical at 2A S-Speed Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in VCE(on) typ. = 1.10V Chopper Applications G Very Tight Vce(on) distribution Indust

 6.4. Size:161K  international rectifier
 irg4bc10k.pdf

D IRG4BC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Short Circuit Rated UltraFast Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 Industry standard TO-220

 6.5. Size:220K  international rectifier
 irg4bc10sd-s.pdf

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Extremely low voltage drop 1.1Vtyp. @ 2A S-Series Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

 6.6. Size:314K  international rectifier
 irg4bc10sd.pdf

PD -91784B IRG4BC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Extremely low voltage drop 1.1Vtyp. @ 2A VCES = 600V S-Series Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V Very Tight Vce(on) distribution G IGB