IRG4BC20FD Todos los transistores

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IRG4BC20FD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4BC20FD

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 2V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 9A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220AB

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IRG4BC20FD Datasheet (PDF)

1.1. irg4bc20fd-s.pdf Size:222K _international_rectifier

IRG4BC20FD
IRG4BC20FD

PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.66V Generation 4 IGBT design provides tighter G parameter distribution and higher e

1.2. irg4bc20fd.pdf Size:222K _international_rectifier

IRG4BC20FD
IRG4BC20FD

PD 91601A I Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Fast: optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.66V Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, I

1.3. irg4bc20f.pdf Size:161K _international_rectifier

IRG4BC20FD
IRG4BC20FD

D I I T I T D T I T I T Features C Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.66V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V

1.4. irg4bc20fd-s.pdf Size:290K _igbt_a

IRG4BC20FD
IRG4BC20FD

PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating C frequencies ( 1-5 kHz in hard switching, >20 VCES = 600V kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.66V G Generation 3

1.5. irg4bc20fd.pdf Size:313K _igbt_a

IRG4BC20FD
IRG4BC20FD

 IRG4BC20FDPbF Fast CoPack IGBT Features C = G

1.6. irg4bc20f.pdf Size:163K _igbt_a

IRG4BC20FD
IRG4BC20FD

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.66V G parameter distribution and higher efficiency than Generation 3 @VG

Otros transistores... HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K , IRG4BC10KD , IRG4BC10S , IRG4BC10SD , IRG4BC10UD , IRG4BC20F , SGW30N60HS , IRG4BC20K , IRG4BC20KD , IRG4BC20KD-S , IRG4BC20K-S , IRG4BC20S , IRG4BC20SD , IRG4BC20SD-S , IRG4BC20U .

 


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