IRG4BC20KD Todos los transistores

 

IRG4BC20KD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRG4BC20KD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 60 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.27 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 34 nS
   Coesⓘ - Capacitancia de salida, typ: 61 pF
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

IRG4BC20KD Datasheet (PDF)

 ..1. Size:202K  international rectifier
 irg4bc20kd.pdf pdf_icon

IRG4BC20KD

PD -91599AIRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on

 0.1. Size:222K  international rectifier
 irg4bc20kd-s.pdf pdf_icon

IRG4BC20KD

PD -91598AIRG4BC20KD-SINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on)

 0.2. Size:315K  international rectifier
 irg4bc20kdpbf.pdf pdf_icon

IRG4BC20KD

IRG4BC20KDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesC GE =

 5.1. Size:141K  international rectifier
 irg4bc20k.pdf pdf_icon

IRG4BC20KD

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.27V switching speedG Latest generation design

MOSTRAR MÁS

Otros transistores... IRG4BC10K , IRG4BC10KD , IRG4BC10S , IRG4BC10SD , IRG4BC10UD , IRG4BC20F , IRG4BC20FD , IRG4BC20K , GT30G122 , IRG4BC20KD-S , IRG4BC20K-S , IRG4BC20S , IRG4BC20SD , IRG4BC20SD-S , IRG4BC20U , IRG4BC20UD , IRG4BC20W .

History: NGD15N41A | IXBF12N300 | NCE40TD135LP | IGB20N65S5 | JNG20T60PS | 2MBI300NB-060 | NCE75ED120VT4

 

 
Back to Top

 


 
.