IRG4BC20KD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4BC20KD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 60 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.27 V @25℃

trⓘ - Tiempo de subida, typ: 34 nS

Coesⓘ - Capacitancia de salida, typ: 61 pF

Encapsulados: TO220AB

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IRG4BC20KD datasheet

 ..1. Size:202K  international rectifier
 irg4bc20kd.pdf pdf_icon

IRG4BC20KD

PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C Short Circuit Rated UltraFast Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on

 0.1. Size:222K  international rectifier
 irg4bc20kd-s.pdf pdf_icon

IRG4BC20KD

PD -91598A IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C Short Circuit Rated UltraFast Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on)

 0.2. Size:315K  international rectifier
 irg4bc20kdpbf.pdf pdf_icon

IRG4BC20KD

IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C GE =

 5.1. Size:141K  international rectifier
 irg4bc20k.pdf pdf_icon

IRG4BC20KD

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.27V switching speed G Latest generation design

MOSTRAR MÁS

Otros transistores... IRG4BC10K, IRG4BC10KD, IRG4BC10S, IRG4BC10SD, IRG4BC10UD, IRG4BC20F, IRG4BC20FD, IRG4BC20K, IHW40T60, IRG4BC20KD-S, IRG4BC20K-S, IRG4BC20S, IRG4BC20SD, IRG4BC20SD-S, IRG4BC20U, IRG4BC20UD, IRG4BC20W