2MBI150UA-120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2MBI150UA-120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 735
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 200
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.95
Tensión máxima de puerta-umbral |VGE(th)|, V: 8.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 210
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de 2MBI150UA-120 - IGBT
2MBI150UA-120 Datasheet (PDF)
2mbi150ua-120.pdf
2MBI150UA-1201200V / 150A 2 in one-packageIGBT Module U-SeriesEquivalent Circuit SchematicFeaturesApplications High speed switching Inverter for Motor driveE2 Voltage drive AC and DC Servo drive amplifier C1 Low inductance module structure Uninterruptible power supply Industrial machines, such as Welding machinesC2E1G1 E1 G2 E2Maximum ratings and ch
2mbi150u4h-120.pdf
2MBI150U4H-120 IGBT ModulesIGBT MODULE (U series)1200V / 150A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unles
2mbi150u2a-060.pdf
2MBI150U2A-060600V / 150A 2 in one-packageIGBT Module U-Series2. Equivalent circuitEquivalent Circuit SchematicFeaturesApplications High speed switching Inverter for Motor drive Voltage drive AC and DC Servo drive amplifier Low inductance module structure Uninterruptible power supply Industrial machines, such as Welding machinesMaximum ratings and characte
2mbi150u4a-120.pdf
SPECIFICATIONIGBT MODULEDevice Name :2MBI150U4A-120Type Name :MS5F 6031Spec. No. :S.MiyashitaFeb. 09 05T.Miyasaka Y.SekiFeb. 09 05 1MS5F603113K.YamadaH04-004-07bR e v i s e d R e c o r d sClassi- AppliedDate Ind. Content Drawn Checked Checked Approvedfication dateIssuedFeb.-09 -05 T.Miyasaka K.YamadaEnactment Y.Sekidate2MS5F603113H04
2mbi150u4b-120.pdf
SPECIFICATIONIGBT MODULEDevice Name :2MBI150U4B-120Type Name :MS5F 6059Spec. No. :S.MiyashitaMar. 09 05T.Miyasaka Y.SekiMar. 09 05 1MS5F605913K.YamadaH04-004-07bR e v i s e d R e c o r d sClassi- AppliedDate Ind. Content Drawn Checked Checked Approvedfication dateIssuedMar.-09 -05 T.Miyasaka K.YamadaEnactment Y.Sekidate2MS5F605913H04
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ