2MBI200NB-120 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2MBI200NB-120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
trⓘ - Tiempo de subida, typ: 250 nS
Coesⓘ - Capacitancia de salida, typ: 11600 pF
Encapsulados: MODULE
Búsqueda de reemplazo de 2MBI200NB-120 IGBT
- Selección ⓘ de transistores por parámetros
2MBI200NB-120 datasheet
2mbi200nb-120.pdf
IGBT MODULE ( N series ) n Outline Drawing n n Features n Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic Minimized Internal Stray Inductance Overcurrent Limiting Function (4 5 Times Rated Current) n Applications n High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power
2mbi200n-060.pdf
IGBT MODULE ( N series ) n Outline Drawing n n Features n Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic Minimized Internal Stray Inductance Overcurrent Limiting Function ( 3 Times Rated Current) n Applications n High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power
2mbi200nt-120-02.pdf
This datasheet has been download from www.datasheetcatalog.com Datasheets for electronics components.
2mbi200n-120.pdf
IGBT MODULE ( N series ) n Outline Drawing n n Features n Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic Minimized Internal Stray Inductance Overcurrent Limiting Function (4 5 Times Rated Current) n Applications n High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power
Otros transistores... 2MBI150VA-060-50 , 2MBI150VA-120-50 , 2MBI150VB-120-50 , 2MBI200HH-120-50 , 2MBI200J-120 , 2MBI200LB-060 , 2MBI200N-060 , 2MBI200N-120 , RJP63K2DPP-M0 , 2MBI200NT-120-02 , 2MBI200PB-140 , 2MBI200S-120 , 2MBI200SB-120 , 2MBI200TA-060 , 2MBI200U2A-060 , 2MBI200U4B-120 , 2MBI200U4D .
History: 2MBI450VE-120-50
History: 2MBI450VE-120-50
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc710 | 2sc968 | 2sd217 | bdw93c equivalent | cs7n60f | d613 transistor | fdmc8884 mosfet | k3569 mosfet equivalent