2MBI550VN-170-50 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2MBI550VN-170-50
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 3750 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 750 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.9 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 500 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
2MBI550VN-170-50 Datasheet (PDF)
2mbi550vn-170-50.pdf

http://www.fujielectric.com/products/semiconductor/2MBI550VN-170-50 IGBT ModulesIGBT MODULE (V series)1700V / 550A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Charac
2mbi550vj-170-50.pdf

http://www.fujielectric.com/products/semiconductor/2MBI550VJ-170-50 IGBT ModulesIGBT MODULE (V series)1700V / 550A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Charac
2mbi50j-060.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
Otros transistores... 2MBI450VN-170-50 , 2MBI50F-120 , 2MBI50J-060 , 2MBI50L-060 , 2MBI50L-120 , 2MBI50N-060 , 2MBI50N-120 , 2MBI550VJ-170-50 , GT30F132 , 2MBI600NT-060 , 2MBI600U2E-060 , 2MBI600U4G-120 , 2MBI600U4G-170 , 2MBI600VD-060-50 , 2MBI600VE-120-50 , 2MBI600VJ-120-50 , 2MBI600VN-120-50 .
History: IXGR60N60C2C1
History: IXGR60N60C2C1



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