IRG4BC30U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4BC30U

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 2.1V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 12A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220AB

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IRG4BC30U Datasheet (PDF)

1.1. irg4bc30u-s.pdf Size:308K _international_rectifier

PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C � UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode � Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 12A E � Industry standa

1.2. irg4bc30ud.pdf Size:234K _international_rectifier

PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features � UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V � Generation 4 IGBT design provides tighter G parameter distribution and highe

 1.3. irg4bc30u.pdf Size:167K _international_rectifier

D I ? I T I T D T I T I T Features C Features Features Features Features � UltraFast: optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode � Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE

1.4. irg4bc30u-s.pdf Size:213K _igbt_a

PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 12A E • Indust

 1.5. irg4bc30ud.pdf Size:237K _igbt_a

PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V • Generation 4 IGBT design provides tighter G parameter distribution an

1.6. irg4bc30udpbf.pdf Size:381K _igbt_a

PD-94810A IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating C frequencies 8-40 kHz in hard switching, >200 VCES = 600V kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.95V G Generation

1.7. auirg4bc30u-s.pdf Size:324K _igbt_a

PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features VCE(on) typ. = 1.95V G • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, E @VGE = 15V, IC = 12A >200 kHz in resonant mode n-channel • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant •

1.8. irg4bc30u.pdf Size:173K _igbt_a

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation

Otros transistores... IRG4BC20W , IRG4BC30F , IRG4BC30FD , IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , SKA06N60 , IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W .