6MBP10VAA120-50 Todos los transistores

 

6MBP10VAA120-50 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 6MBP10VAA120-50
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 97 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

6MBP10VAA120-50 Datasheet (PDF)

 0.1. Size:720K  fuji
6mbp10vaa120-50.pdf pdf_icon

6MBP10VAA120-50

http://www.fujielectric.com/products/semiconductor/6MBP10VAA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 10A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decre

 8.1. Size:361K  fuji
6mbp100vda060-50.pdf pdf_icon

6MBP10VAA120-50

http://www.fujielectric.com/products/semiconductor/6MBP100VDA060-50 IGBT ModulesIGBT MODULE (V series)600V / 100A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decr

 8.2. Size:2629K  fuji
6mbp100na060-01.pdf pdf_icon

6MBP10VAA120-50

 8.3. Size:404K  fuji
6mbp100ra060.pdf pdf_icon

6MBP10VAA120-50

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History: APTGT600U170D4 | APTGT75SK120D1

 

 
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History: APTGT600U170D4 | APTGT75SK120D1

6MBP10VAA120-50
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