6MBP25VAA120-50 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 6MBP25VAA120-50
Tipo de transistor: IGBT + Diode + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 166 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 1.6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
Paquete / Cubierta: MODULE
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6MBP25VAA120-50 Datasheet (PDF)
6mbp25vaa120-50.pdf
http://www.fujielectric.com/products/semiconductor/6MBP25VAA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decre
6mbp25vda120-50.pdf
http://www.fujielectric.com/products/semiconductor/6MBP25VDA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decre
6mbp25vba120-50.pdf
http://www.fujielectric.com/products/semiconductor/6MBP25VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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