6MBP25VBA120-50 Todos los transistores

 

6MBP25VBA120-50 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 6MBP25VBA120-50
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 151 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

6MBP25VBA120-50 Datasheet (PDF)

 0.1. Size:452K  fuji
6mbp25vba120-50.pdf pdf_icon

6MBP25VBA120-50

http://www.fujielectric.com/products/semiconductor/6MBP25VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

 7.1. Size:373K  fuji
6mbp25vda120-50.pdf pdf_icon

6MBP25VBA120-50

http://www.fujielectric.com/products/semiconductor/6MBP25VDA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decre

 7.2. Size:834K  fuji
6mbp25vaa120-50.pdf pdf_icon

6MBP25VBA120-50

http://www.fujielectric.com/products/semiconductor/6MBP25VAA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decre

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History: IRG7PH28UD1 | APT40GP90BG

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