IRG4BC30W Todos los transistores

 ..1. Size:142K  international rectifier
 irg4bc30w.pdf

D I I T D T I T I T Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC

 0.1. Size:169K  international rectifier
 irg4bc30w-s.pdf

IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.10V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E Low IGBT conduction losses n-channe

 6.1. Size:302K  international rectifier
 irg4bc30fd.pdf

PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighter G parameter distribution and hig

 6.2. Size:156K  international rectifier
 irg4bc30s-s.pdf

PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard optimized for minimum saturation VCES = 600V voltage and low operating frequencies (

 6.3. Size:301K  international rectifier
 auirg4bc30s-s.pdf

AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Standard optimized for minimum saturation VCE(on) typ. = 1.4V G voltage and low operating frequencies (

 6.4. Size:173K  international rectifier
 irg4bc30u.pdf

D I I T I T D T I T I T Features C Features Features Features Features UltraFast optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation

 6.5. Size:140K  international rectifier
 irg4bc30k.pdf

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed Latest generation design

 6.6. Size:365K  international rectifier
 irg4bc30fd1.pdf

PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH C HYPERFAST DIODE VCES = 600V Features Fast optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). VCE(on) typ. = 1.59V G Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than @VGE = 15V, IC = 17A Generation 3.

 6.7. Size:301K  international rectifier
 auirg4bc30s-s auirg4bc30s-sl.pdf

AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Standard optimized for minimum saturation VCE(on) typ. = 1.4V G voltage and low operating frequencies (

 6.8. Size:324K  international rectifier
 auirg4bc30u-s.pdf

PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features VCE(on) typ. = 1.95V G UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, E @VGE = 15V, IC = 12A >200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant

 6.9. Size:164K  international rectifier
 irg4bc30k-s.pdf

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V switching speed G Latest generation desig

 6.10. Size:342K  international rectifier
 irg4bc30kd.pdf

PD -94910A IRG4BC30KDPbF Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed tighter parameter distribu

 6.11. Size:225K  international rectifier
 irg4bc30kds.pdf

PD -91594C IRG4BC30KD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switch

 6.12. Size:228K  international rectifier
 irg4bc30kd-s.pdf

PD -91594C IRG4BC30KD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switch

 6.13. Size:213K  international rectifier
 irg4bc30u-s.pdf

PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 12A E Indust

 6.14. Size:164K  international rectifier
 irg4bc30s.pdf

D I I T I T D T I T I T Features C Features Features Features Features Standard optimized for minimum saturation VCES = 600V voltage and low operating frequencies (

 6.15. Size:237K  international rectifier
 irg4bc30ud.pdf

PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution an

 6.16. Size:1260K  international rectifier
 irg4bc30fd-s.pdf

PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH C HYPERFAST DIODE VCES = 600V Features VCE(on) typ. = 1.59V Fast optimized for medium operating frequencies G (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter @VGE = 15V, IC = 17A E parameter distribution and higher efficiency than Generation

 6.17. Size:381K  international rectifier
 irg4bc30udpbf.pdf

PD-94810A IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features UltraFast Optimized for high operating C frequencies 8-40 kHz in hard switching, >200 VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.95V G Generation

 6.18. Size:172K  international rectifier
 irg4bc30f.pdf

D I I T I T D T I T I T Features C Features Features Features Features Fast optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VG