7MBP200VEA120-50 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 7MBP200VEA120-50  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 961 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃

Encapsulados: MODULE

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7MBP200VEA120-50 datasheet

 0.1. Size:476K  fuji
7mbp200vea120-50.pdf pdf_icon

7MBP200VEA120-50

http //www.fujielectric.com/products/semiconductor/ 7MBP200VEA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 200A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big dec

 4.1. Size:471K  fuji
7mbp200vea060-50.pdf pdf_icon

7MBP200VEA120-50

http //www.fujielectric.com/products/semiconductor/ 7MBP200VEA060-50 IGBT Modules IGBT MODULE (V series) 600V / 200A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decr

 6.1. Size:437K  fuji
7mbp200vda060-50.pdf pdf_icon

7MBP200VEA120-50

http //www.fujielectric.com/products/semiconductor/ 7MBP200VDA060-50 IGBT Modules IGBT MODULE (V series) 600V / 200A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decr

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