7MBP50VDA120-50 Todos los transistores

 

7MBP50VDA120-50 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 7MBP50VDA120-50
   Tipo de transistor: IGBT + Diode + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.25 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 1.6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: MODULE

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7MBP50VDA120-50 Datasheet (PDF)

 0.1. Size:450K  fuji
7mbp50vda120-50.pdf

7MBP50VDA120-50
7MBP50VDA120-50

http://www.fujielectric.com/products/semiconductor/7MBP50VDA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 50A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decre

 5.1. Size:432K  fuji
7mbp50vda060-50.pdf

7MBP50VDA120-50
7MBP50VDA120-50

http://www.fujielectric.com/products/semiconductor/7MBP50VDA060-50 IGBT ModulesIGBT MODULE (V series)600V / 50A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrea

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7MBP50VDA120-50
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