7MBP50VDA120-50 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 7MBP50VDA120-50  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.25 V @25℃

Encapsulados: MODULE

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7MBP50VDA120-50 datasheet

 0.1. Size:450K  fuji
 7mbp50vda120-50.pdf pdf_icon

7MBP50VDA120-50

http //www.fujielectric.com/products/semiconductor/ 7MBP50VDA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 50A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decre

 5.1. Size:432K  fuji
 7mbp50vda060-50.pdf pdf_icon

7MBP50VDA120-50

http //www.fujielectric.com/products/semiconductor/ 7MBP50VDA060-50 IGBT Modules IGBT MODULE (V series) 600V / 50A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decrea

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