IRG4BC40S Todos los transistores

 

IRG4BC40S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRG4BC40S
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 160 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.32 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 18 nS
   Coesⓘ - Capacitancia de salida, typ: 140 pF
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

IRG4BC40S Datasheet (PDF)

 ..1. Size:162K  international rectifier
irg4bc40s.pdf pdf_icon

IRG4BC40S

PD - 91455BIRG4BC40SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

 6.1. Size:352K  international rectifier
irg4bc40wl.pdf pdf_icon

IRG4BC40S

PD - 95788BIRG4BC40WSPbFIRG4BC40WLPbFINSULATED GATE BIPOLAR TRANSISTORFeatures Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applicationsVCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.05VG 50% reduction of Eoff parameter Low IGBT conduction losses@VG

 6.2. Size:352K  international rectifier
irg4bc40ws.pdf pdf_icon

IRG4BC40S

PD - 95788BIRG4BC40WSPbFIRG4BC40WLPbFINSULATED GATE BIPOLAR TRANSISTORFeatures Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applicationsVCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.05VG 50% reduction of Eoff parameter Low IGBT conduction losses@VG

 6.3. Size:174K  international rectifier
irg4bc40u.pdf pdf_icon

IRG4BC40S

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.72VG parameter distribution and higher efficiency than Generation

Otros transistores... IRG4BC30K-S , IRG4BC30S , IRG4BC30U , IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , GT60N321 , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD .

History: MMG300D120B6HN | IXGT30N60C3D1 | RJH1CM5DPQ-E0 | APTGT50X170BTP3 | IXGT20N140C3H1 | APT15GN120KG | MMG200DR120B

 

 
Back to Top

 


 
.