IRG4BC40S Todos los transistores

 ..1. Size:162K  international rectifier
 irg4bc40s.pdf

PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard optimized for minimum saturation VCES = 600V voltage and low operating frequencies (

 6.1. Size:352K  international rectifier
 irg4bc40wl.pdf

PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applications VCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.05V G 50% reduction of Eoff parameter Low IGBT conduction losses @VG

 6.2. Size:352K  international rectifier
 irg4bc40ws.pdf

PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applications VCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.05V G 50% reduction of Eoff parameter Low IGBT conduction losses @VG

 6.3. Size:174K  international rectifier
 irg4bc40u.pdf

D I I T I T D T I T I T Features C Features Features Features Features UltraFast optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation

 6.4. Size:160K  international rectifier
 irg4bc40k.pdf

D I Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features Short Circuit Rated UltraFast optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V VCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiency G than Gen

 6.5. Size:173K  international rectifier
 irg4bc40f.pdf

D I I T I T D T I T I T Features C Features Features Features Features Fast optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VG

 6.6. Size:132K  international rectifier
 irg4bc40w.pdf

PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC