7MBR25NF120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 7MBR25NF120
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 600 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de 7MBR25NF120 - IGBT
7MBR25NF120 Datasheet (PDF)
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7mbr25sc120.pdf
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7mbr25vm120-50.pdf
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7mbr25vw120-50.pdf
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7mbr25sa120.pdf
. ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.byIGBT Modules7MBR25SA120IGBT MODULE (S series)1200V / 25A / PIMFeatures Low VCE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuitApplications Inverter for motor dr
7mbr25va120-50.pdf
http://www.fujielectric.com/products/semiconductor/7MBR25VA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteris
7mbr25lc120.pdf
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