2N6976 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2N6975, 2N6976, S E M I C O N D U C T O R 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs April 1995 April 1995 Features Package JEDEC TO-204AA 5A, 400V and 500V BOTTOM VIEW VCE(ON) 2V COLLECTOR EMITTER (FLANGE) TFI 1 s, 0.5 s Low On-State Voltage GATE Fast Switching Speeds High Input Impedance Terminal Diagram Applications N-CHANNEL ENHANCEMENT M

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 697 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCER Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5V PD Power Dissipation @ Ta=25 C 600

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W A PT @ T = 250C (2) 2.0 W C 0 Operating & Storage Juncti