IRG4IBC20UD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4IBC20UD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 34 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 11.4 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 39 pF
Encapsulados: TO220F
Búsqueda de reemplazo de IRG4IBC20UD IGBT
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IRG4IBC20UD datasheet
irg4ibc20ud.pdf
PD -91752A IRG4IBC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features 2.5kV, 60s insulation voltage VCES = 600V 4.8 mm creapage distance to heatsink UltraFast Optimized for high operating VCE(on) typ. = 1.85V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant mode IGBT co-packaged with HEXF
irg4ibc20w.pdf
PD 91785A IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improve VCE(on) typ. = 2.16V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 6
irg4ibc20kd.pdf
PD -91689A IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) Short Circuit Rating 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on) typ. = 2.27V para
irg4ibc20fd.pdf
PD -91750A IRG4IBC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Very Low 1.66V votage drop VCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.66V Fast Optimized for medium operating G frequencies ( 1-5 kHz in hard switchi
Otros transistores... IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRGB20B60PD1 , IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W , IRG4P254S , IRG4PC30F , IRG4PC30FD .
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