BSM10GD120DN2 Todos los transistores

 

BSM10GD120DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM10GD120DN2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 80 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 80 pF
   Paquete / Cubierta: MODULE

 Búsqueda de reemplazo de BSM10GD120DN2 - IGBT

 

BSM10GD120DN2 Datasheet (PDF)

 ..1. Size:250K  eupec
bsm10gd120dn2.pdf

BSM10GD120DN2
BSM10GD120DN2

BSM 10 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

 ..2. Size:277K  eupec
bsm10gd120dn2 e3224.pdf

BSM10GD120DN2
BSM10GD120DN2

BSM 10 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage

 8.1. Size:158K  eupec
bsm10gp60.pdf

BSM10GD120DN2
BSM10GD120DN2

Technische Information / Technical InformationIGBT-ModuleBSM10GP60IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergl

 8.2. Size:126K  eupec
bsm10gp120.pdf

BSM10GD120DN2
BSM10GD120DN2

Technische Information / Technical InformationIGBT-ModuleBSM10GP120IGBT-ModulesElektrische Eigenschaften / Electrical propertiesHchstzulssige Werte / Maximum rated valuesDiode Gleichrichter/ Diode RectifierPeriodische Rckw. SpitzensperrspannungVRRM 1600 Vrepetitive peak reverse voltageDurchlastrom GrenzeffektivwertIFRMSM 40 ARMS forward current per chip Dauergl

 9.1. Size:87K  siemens
bsm100gal120dlck.pdf

BSM10GD120DN2
BSM10GD120DN2

BSM 100 GAL 120 DN2IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 120

 9.2. Size:242K  infineon
bsm100gb120dlc.pdf

BSM10GD120DN2
BSM10GD120DN2

Technische Information / technical informationIGBT-ModuleBSM100GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

 9.3. Size:95K  eupec
bsm100gb170dlc.pdf

BSM10GD120DN2
BSM10GD120DN2

Technische Information / Technical InformationIGBT-ModuleBSM 100 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungVCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 100 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 200 APeriodischer Kollektor Spitzens

 9.4. Size:224K  eupec
bsm100gb170dn2.pdf

BSM10GD120DN2
BSM10GD120DN2

BSM 100 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 15 OhmType VCE IC Package Ordering CodeBSM 100 GB 170 DN2 1700V 145A HALF-BRIDGE 2 C67070-A2703-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700

 9.5. Size:166K  eupec
bsm100gb120dn2.pdf

BSM10GD120DN2
BSM10GD120DN2

BSM 100 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

 9.6. Size:141K  eupec
bsm100gar120dn2.pdf

BSM10GD120DN2
BSM10GD120DN2

BSM 100 GAR 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAR 120 DN2 1200V 150A HALF BRIDGE GAR 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

 9.7. Size:229K  eupec
bsm100gb120dlck.pdf

BSM10GD120DN2
BSM10GD120DN2

Technische Information / technical informationIGBT-ModuleBSM100GB120DLCKIGBT-modulesIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 100 ADC-collector current T = 25C, T = 150C I 205 APeriodischer Kollektor Spitzen

 9.8. Size:209K  eupec
bsm100gb120dn2k.pdf

BSM10GD120DN2
BSM10GD120DN2

BSM 100 GB 120 DN2KIGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GB 120 DN2K 1200V 145A HALF-BRIDGE 1 C67070-A2107-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage V

 9.9. Size:126K  eupec
bsm100gb60dlc.pdf

BSM10GD120DN2
BSM10GD120DN2

Technische Information / Technical InformationIGBT-ModuleBSM 100 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 70C IC,nom. 100 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 130 APeriodischer Kollektor Spitzenstrom

 9.10. Size:144K  eupec
bsm100gal120dn2.pdf

BSM10GD120DN2
BSM10GD120DN2

BSM 100 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE

 9.11. Size:136K  eupec
bsm100gd60dlc.pdf

BSM10GD120DN2
BSM10GD120DN2

Technische Information / Technical InformationIGBT-ModuleBSM 100 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 65C IC,nom. 100 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 130 APeriodischer Kollektor Spitzenstrom

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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