BSM10GD120DN2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM10GD120DN2 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 80 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 80 pF
Encapsulados: MODULE
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BSM10GD120DN2 datasheet
..1. Size:250K eupec
bsm10gd120dn2.pdf 
BSM 10 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1
..2. Size:277K eupec
bsm10gd120dn2 e3224.pdf
BSM 10 GD 120 DN2 E3224 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage
8.1. Size:158K eupec
bsm10gp60.pdf
Technische Information / Technical Information IGBT-Module BSM10GP60 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauergl
8.2. Size:126K eupec
bsm10gp120.pdf
Technische Information / Technical Information IGBT-Module BSM10GP120 IGBT-Modules Elektrische Eigenschaften / Electrical properties H chstzul ssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische R ckw. Spitzensperrspannung VRRM 1600 V repetitive peak reverse voltage Durchla strom Grenzeffektivwert IFRMSM 40 A RMS forward current per chip Dauergl
9.1. Size:87K siemens
bsm100gal120dlck.pdf
BSM 100 GAL 120 DN2 IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 120
9.2. Size:242K infineon
bsm100gb120dlc.pdf
Technische Information / technical information IGBT-Module BSM100GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro
9.3. Size:95K eupec
bsm100gb170dlc.pdf
Technische Information / Technical Information IGBT-Module BSM 100 GB 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 100 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 200 A Periodischer Kollektor Spitzens
9.4. Size:224K eupec
bsm100gb170dn2.pdf
BSM 100 GB 170 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 15 Ohm Type VCE IC Package Ordering Code BSM 100 GB 170 DN2 1700V 145A HALF-BRIDGE 2 C67070-A2703-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1700 V Collector-gate voltage VCGR RGE = 20 k 1700
9.5. Size:166K eupec
bsm100gb120dn2.pdf
BSM 100 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE
9.6. Size:141K eupec
bsm100gar120dn2.pdf
BSM 100 GAR 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GAR 120 DN2 1200V 150A HALF BRIDGE GAR 2 C67076-A2012-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE
9.7. Size:229K eupec
bsm100gb120dlck.pdf
Technische Information / technical information IGBT-Module BSM100GB120DLCK IGBT-modules IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 100 A DC-collector current T = 25 C, T = 150 C I 205 A Periodischer Kollektor Spitzen
9.8. Size:209K eupec
bsm100gb120dn2k.pdf
BSM 100 GB 120 DN2K IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 120 DN2K 1200V 145A HALF-BRIDGE 1 C67070-A2107-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage V
9.9. Size:126K eupec
bsm100gb60dlc.pdf
Technische Information / Technical Information IGBT-Module BSM 100 GB 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 70 C IC,nom. 100 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 130 A Periodischer Kollektor Spitzenstrom
9.10. Size:144K eupec
bsm100gal120dn2.pdf
BSM 100 GAL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE
9.11. Size:136K eupec
bsm100gd60dlc.pdf
Technische Information / Technical Information IGBT-Module BSM 100 GD 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 65 C IC,nom. 100 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 130 A Periodischer Kollektor Spitzenstrom
Otros transistores... BM63363S-VA, BM63363S-VC, BM63364S-VA, BM63364S-VC, BM63763S-VA, BM63763S-VC, BM63764S-VA, BM63764S-VC, IRGP4063D, BSM10GD120DN2_E3224, BSM10GP120, BSM10GP60, BSM150GAL120DLC, BSM150GAL120DN2, BSM150GAR120DN2, BSM150GB120DLC, BSM150GB120DN2
