BSM150GB120DLC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM150GB120DLC
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 1250
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 300
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 60
Carga total de la puerta (Qg), typ, nC: 1600
Paquete / Cubierta: MODULE
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BSM150GB120DLC Datasheet (PDF)
bsm150gb120dlc.pdf
Technische Information / technical informationIGBT-ModuleBSM150GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro
bsm150gb120dn2.pdf
BSM 150 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE
bsm150gb170dlc.pdf
Technische Information / Technical InformationIGBT-ModuleBSM 150 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 150 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 300 APeriodischer Kollektor Spitzen
bsm150gb170dn2.pdf
BSM 150 GB 170 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 10 OhmType VCE IC Package Ordering CodeBSM 150 GB 170 DN2 1700V 220A HALF-BRIDGE 2 C67070-A2704-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1700 VCollector-gate voltage VCGRRGE = 20 k 1700
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ