BSM150GB170DLC IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM150GB170DLC
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 100 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de BSM150GB170DLC IGBT
BSM150GB170DLC PDF specs
bsm150gb170dlc.pdf
Technische Information / Technical Information IGBT-Module BSM 150 GB 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 150 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 300 A Periodischer Kollektor Spitzen... See More ⇒
bsm150gb170dn2.pdf
BSM 150 GB 170 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 10 Ohm Type VCE IC Package Ordering Code BSM 150 GB 170 DN2 1700V 220A HALF-BRIDGE 2 C67070-A2704-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1700 V Collector-gate voltage VCGR RGE = 20 k 1700 ... See More ⇒
bsm150gb120dlc.pdf
Technische Information / technical information IGBT-Module BSM150GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro... See More ⇒
bsm150gb120dn2.pdf
BSM 150 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE... See More ⇒
Otros transistores... BSM10GD120DN2_E3224 , BSM10GP120 , BSM10GP60 , BSM150GAL120DLC , BSM150GAL120DN2 , BSM150GAR120DN2 , BSM150GB120DLC , BSM150GB120DN2 , IRGP4066D , BSM150GB170DN2 , BSM150GB60DLC , BSM150GD60DLC , BSM15GD120DN2 , BSM15GP120 , BSM15GP60 , BSM200GA120DLC , BSM200GA120DLCS .
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