BSM200GA120DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM200GA120DN2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1550 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 2000 pF
Paquete / Cubierta: MODULE
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BSM200GA120DN2 Datasheet (PDF)
bsm200ga120dn2 bsm200ga120dn2s.pdf
BSM 200 GA 120 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GA 120 DN2 1200V 300A SINGLE SWITCH 1 C67076-A2006-A70BSM 200 GA 120 DN2 S 1200V 300A SSW SENSE 1 C67070-A2006-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollect
bsm200ga120dlcs.pdf
Technische Information / technical informationIGBT-ModuleBSM200GA120DLCSIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstr
bsm200ga120dlc.pdf
Technische Information / technical informationIGBT-ModuleBSM200GA120DLCIGBT-modulesIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 80C I 200 ADC-collector current T = 25C I 370 APeriodischer Kollektor Spitzenstromt = 1 ms, T = 80
bsm200ga170dn2 bsm200ga170dn2s.pdf
BSM 200 GA 170 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 6.8 OhmType VCE IC Package Ordering CodeBSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67BSM 200 GA 170 DN2 S 1700V 290A SSW SENSE 1 C67070-A2707-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter vo
bsm200ga170dlc.pdf
Technische Information / Technical InformationIGBT-ModuleBSM 200 GA 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungVCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 400 APeriodischer Kollektor Spitzens
Otros transistores... BSM150GB170DN2 , BSM150GB60DLC , BSM150GD60DLC , BSM15GD120DN2 , BSM15GP120 , BSM15GP60 , BSM200GA120DLC , BSM200GA120DLCS , MGD623S , BSM200GA120DN2S , BSM200GA170DLC , BSM200GA170DN2 , BSM200GA170DN2S , BSM200GAL120DLC , BSM200GAL120DN2 , BSM200GAR120DN2 , BSM200GB120DLC .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2