BSM200GA170DN2S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSM200GA170DN2S  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1750 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 290 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.4 V @25℃

trⓘ - Tiempo de subida, typ: 200 nS

Coesⓘ - Capacitancia de salida, typ: 2500 pF

Encapsulados: MODULE

  📄📄 Copiar 

 Búsqueda de reemplazo de BSM200GA170DN2S IGBT

- Selecciónⓘ de transistores por parámetros

 

BSM200GA170DN2S datasheet

 ..1. Size:227K  eupec
 bsm200ga170dn2 bsm200ga170dn2s.pdf pdf_icon

BSM200GA170DN2S

BSM 200 GA 170 DN2 IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 6.8 Ohm Type VCE IC Package Ordering Code BSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67 BSM 200 GA 170 DN2 S 1700V 290A SSW SENSE 1 C67070-A2707-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter vo

 2.1. Size:119K  eupec
 bsm200ga170dlc.pdf pdf_icon

BSM200GA170DN2S

Technische Information / Technical Information IGBT-Module BSM 200 GA 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 400 A Periodischer Kollektor Spitzens

 5.1. Size:147K  eupec
 bsm200ga120dn2 bsm200ga120dn2s.pdf pdf_icon

BSM200GA170DN2S

BSM 200 GA 120 DN2 IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GA 120 DN2 1200V 300A SINGLE SWITCH 1 C67076-A2006-A70 BSM 200 GA 120 DN2 S 1200V 300A SSW SENSE 1 C67070-A2006-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collect

 5.2. Size:276K  eupec
 bsm200ga120dlcs.pdf pdf_icon

BSM200GA170DN2S

Technische Information / technical information IGBT-Module BSM200GA120DLCS IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstr

MOSTRAR MÁS

Otros transistores... BSM15GP120, BSM15GP60, BSM200GA120DLC, BSM200GA120DLCS, BSM200GA120DN2, BSM200GA120DN2S, BSM200GA170DLC, BSM200GA170DN2, YGF20N65T2, BSM200GAL120DLC, BSM200GAL120DN2, BSM200GAR120DN2, BSM200GB120DLC, BSM200GB120DN2, BSM200GB170DLC, BSM200GB60DLC, BSM200GD60DLC