IRG4IBC30UD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4IBC30UD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 45 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 17 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

trⓘ - Tiempo de subida, typ: 21 nS

Coesⓘ - Capacitancia de salida, typ: 73 pF

Encapsulados: TO220F

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IRG4IBC30UD datasheet

 ..1. Size:231K  international rectifier
 irg4ibc30ud.pdf pdf_icon

IRG4IBC30UD

PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features 2.5kV, 60s insulation voltage U VCES = 600V 4.8 mm creapage distance to heatsink UltraFast Optimized for high operating VCE(on) typ. = 1.95V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant m

 5.1. Size:198K  international rectifier
 irg4ibc30kd.pdf pdf_icon

IRG4IBC30UD

PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) Short Circuit Rating 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on) typ. = 2.21V para

 5.2. Size:223K  international rectifier
 irg4ibc30fd.pdf pdf_icon

IRG4IBC30UD

PD- 91751A IRG4IBC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Very Low 1.59V votage drop VCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.59V Fast Optimized for medium operating G frequencies ( 1-5 kHz in hard switchi

 5.3. Size:163K  international rectifier
 irg4ibc30w.pdf pdf_icon

IRG4IBC30UD

PD 91791A IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improve VCE(on) typ. = 2.1V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12

MOSTRAR MÁS

Otros transistores... IRG4BC40U, IRG4BC40W, IRG4IBC20FD, IRG4IBC20KD, IRG4IBC20UD, IRG4IBC20W, IRG4IBC30FD, IRG4IBC30KD, NCE60TD60BT, IRG4IBC30W, IRG4P254S, IRG4PC30F, IRG4PC30FD, IRG4PC30K, IRG4PC30KD, IRG4PC30S, IRG4PC30U