BSM200GB170DLC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSM200GB170DLC  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1660 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.6 V @25℃

trⓘ - Tiempo de subida, typ: 100 nS

Encapsulados: MODULE

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BSM200GB170DLC datasheet

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 bsm200gb170dlc.pdf pdf_icon

BSM200GB170DLC

Technische Information / Technical Information IGBT-Module BSM 200 GB 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Tvj = 25 C VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 400 A Periodischer Kollek

 5.1. Size:244K  infineon
 bsm200gb120dlc.pdf pdf_icon

BSM200GB170DLC

Technische Information / technical information IGBT-Module BSM200GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro

 5.2. Size:88K  eupec
 bsm200gb120dlc.pdf pdf_icon

BSM200GB170DLC

Technische Information / Technical Information IGBT-Module BSM200GB120DLC IGBT-Modules vorl ufige Daten preliminary data H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 420

 5.3. Size:169K  eupec
 bsm200gb120dn2.pdf pdf_icon

BSM200GB170DLC

BSM 200 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GB 120 DN2 1200V 290A HALF-BRIDGE 2 C67070-A2300-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE

MOSTRAR MÁS

Otros transistores... BSM200GA170DLC, BSM200GA170DN2, BSM200GA170DN2S, BSM200GAL120DLC, BSM200GAL120DN2, BSM200GAR120DN2, BSM200GB120DLC, BSM200GB120DN2, IHW40T60, BSM200GB60DLC, BSM200GD60DLC, BSM20GD60DLC_E3224, BSM25GAL120DN2, BSM25GB120DN2, BSM25GD120DN2, BSM25GD120DN2_E3224, BSM300GA120DLC