BSM20GD60DLC_E3224 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSM20GD60DLC_E3224  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 125 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 32 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

trⓘ - Tiempo de subida, typ: 23 nS

Encapsulados: MODULE

  📄📄 Copiar 

 Búsqueda de reemplazo de BSM20GD60DLC_E3224 IGBT

- Selecciónⓘ de transistores por parámetros

 

BSM20GD60DLC_E3224 datasheet

 0.1. Size:212K  eupec
bsm20gd60dlc e3224.pdf pdf_icon

BSM20GD60DLC_E3224

Technische Information / Technical Information IGBT-Module BSM 20 GD 60 DLC E3224 IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage TC= 80 C IC,nom. 20 A Kollektor-Dauergleichstrom DC-collector current TC= 25 C IC 32 A Periodischer Kollektor Spitzenst

 9.1. Size:145K  1
bsm200gar120dn2.pdf pdf_icon

BSM20GD60DLC_E3224

BSM 200 GAR 120 DN2 IGBT Power Module Single switch with chopper diode at collector Chopper diode like diode of BSM300GA120DN2 Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GAR 120 DN2 1200V 290A HB 200GAR C67070-A2301-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE =

 9.2. Size:244K  infineon
bsm200gb120dlc.pdf pdf_icon

BSM20GD60DLC_E3224

Technische Information / technical information IGBT-Module BSM200GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro

 9.3. Size:156K  eupec
bsm200gb170dlc.pdf pdf_icon

BSM20GD60DLC_E3224

Technische Information / Technical Information IGBT-Module BSM 200 GB 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Tvj = 25 C VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 400 A Periodischer Kollek

Otros transistores... BSM200GAL120DLC, BSM200GAL120DN2, BSM200GAR120DN2, BSM200GB120DLC, BSM200GB120DN2, BSM200GB170DLC, BSM200GB60DLC, BSM200GD60DLC, TGAN20N135FD, BSM25GAL120DN2, BSM25GB120DN2, BSM25GD120DN2, BSM25GD120DN2_E3224, BSM300GA120DLC, BSM300GA120DLCS, BSM300GA120DN2, BSM300GA120DN2S