BSM25GAL120DN2 Todos los transistores

 

BSM25GAL120DN2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM25GAL120DN2
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 200
   Tensión máxima colector-emisor |Vce|, V: 1200
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 38
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.5
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 65
   Capacitancia de salida (Cc), typ, pF: 250
   Paquete / Cubierta: MODULE

 Búsqueda de reemplazo de BSM25GAL120DN2 - IGBT

 

BSM25GAL120DN2 Datasheet (PDF)

 ..1. Size:66K  siemens
bsm25gal120dn2.pdf

BSM25GAL120DN2
BSM25GAL120DN2

BSM 25 GAL 120 DN2IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GAL 120 DN2 1200V 38A HALF BRIDGE GAL 1 C67076-A2009-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200

 8.1. Size:205K  eupec
bsm25gb120dn2.pdf

BSM25GAL120DN2
BSM25GAL120DN2

BSM 25 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GB 120 DN2 1200V 38A HALF-BRIDGE 1 C67076-A2109-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

 8.2. Size:261K  eupec
bsm25gd120dn2.pdf

BSM25GAL120DN2
BSM25GAL120DN2

BSM 25 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1

 8.3. Size:267K  eupec
bsm25gd120dn2 e3224.pdf

BSM25GAL120DN2
BSM25GAL120DN2

BSM 25 GD 120 DN2 E3224IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage

Otros transistores... BSM200GAL120DN2 , BSM200GAR120DN2 , BSM200GB120DLC , BSM200GB120DN2 , BSM200GB170DLC , BSM200GB60DLC , BSM200GD60DLC , BSM20GD60DLC_E3224 , IRGP4063 , BSM25GB120DN2 , BSM25GD120DN2 , BSM25GD120DN2_E3224 , BSM300GA120DLC , BSM300GA120DLCS , BSM300GA120DN2 , BSM300GA120DN2S , BSM300GA170DLC .

 

 
Back to Top

 


BSM25GAL120DN2
  BSM25GAL120DN2
  BSM25GAL120DN2
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ

 

 

 
Back to Top